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where t0 is the carrier lifetime in the bulk semiconductor, tc is the contact recombination lifetime, and ts is the lifetime for recombination with surface states. Mobility values for various semiconductors are given in Table 5.1. t0 ranges from a few milliseconds in indirect semiconductors like germanium and silicon to microseconds in direct materials such as GaAs, but in most detectors of interest for imaging and spectroscopy teff will be dominated by the contact recombination lifetime. Assuming that the diffusion length of the minority carrier is greater than the device thickness

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Thinking out your layer-naming scheme in advance is best. Many disciplines and organizations have layernaming standards. However, sometimes you simply need to rename a layer. To rename a layer, open the Layer Properties Manager. Click the name of the layer, and then click a second time. A border appears, and the name is highlighted. Type the new name and press Enter. Alternatively, you can right-click the layer name and choose Rename Layer from the shortcut menu or just press F2.

The Autologon option is a really, really bad idea from the standpoint of system security. However, it is convenient if you don t have those security concerns.

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ferromagnetic. 276 homogcneous. 275 indisperse. 275 inhomogeneous, 275 isotropic. 27.5 linear. 275 paramagnetic. 276 me\h hybrid. 128 regular. I I6 method collocation, 197 Euler explicit. 175 implicit, 176 Galerkin. 46 Jacob:. 373 Newton s ica1. 203 simplified, 204 termination criterion. 205 of lines. I68 Ritz, 24. 5 I Rungc-Kutta Dormand-Prince. 183 embedded. 182 explicit, 179 implicit, I84 Radau, 201 Minkow\ki Hermann. 382 model elastic beam Euler-Bernoulli, 2 10 Timoshenko. 210 elastic plate Kirchhoff, 246 Reissner-Mindlin. 243 modulus of elasticity, 210 monotonicity. 10 multi-index, 414 neutral surface, 21 1 nodal bass, 105 nodal finite element, 104 nodal points Chebyshev, 71 equidistant, 86 Fekete. 149 Gauss-Lobatto. 7 I norm, 348 I , 407 p-, 3s I continuity of, 360 discrete p - . 350 discrete integral, 350 discrete maximum, 349 energy, 16 equivalent, 363 Euclidean. 3.50 Frobenius, 85, 350 integral, 35 I Lebesgue LIJ-, 317

Hence, three capacitors of thi s value connected in wye at the load will yield a total power faclOr of 0.92 lagging.

ANSWER:

After the text is typed, you can work with it as you would any other type. You can format your text to any font, size, type style, and so on that you like. From here on, any formatting changes work just as they do when you re working with regular text, as shown in Figure 16.19. You can change the font, adjust the size of characters, increase the tracking to spread them out over the course of the path, and even alter the baseline for a specific character or word. Manual kerning comes in handy here, because Photoshop s Optical and Metrics options may not be able to accommodate the fine-tuning you require along certain paths and with certain words and fonts.

predict the irradiance that would be measured at any point and, conversely, knowing the irradiance that would be measured at all points is equivalent to knowing the mutual coherence There are situations in ultrafast and nonlinear optics where the coherence functions described here are insuf cient to fully characterize the eld, but coherence functions are the most fundamental tool for analysis of irradiance-based imaging and spectroscopy (which is to say, essentially all optical imaging and spectroscopy) The enormous disparity between the oscillation frequency of the optical eld and the temporal sampling rate of optoelectronic detectors is as important to the nature of optical detection as the restriction to irradiance measurements The optical frequency is a few hundred terahertz While the fastest optoelectronic point detectors sample at terahertz rates, detectors used in imaging and spectroscopy operate in the kilohertz megahertz range.

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